Frame-by-Frame AMS Narratives of Basic Circuits

Frame-by-Frame AMS Narratives of Basic Circuits

The following descriptions assume:

  • The Aetheric Magnetic Substrate (AMS) is a continuous tension-bearing medium.
  • Matter consists of vorton lattices embedded in AMS.
  • A battery imposes a sustained AMS tension gradient between its terminals.
  • “Current” is the rate of coordinated vorton slip/reconfiguration events that allow AMS tension to relax through a material path.

Time is described in conceptual frames, not absolute units.

1) Battery + Resistor (DC)

Frame 0 — Battery alone

  • Inside the battery, chemical processes maintain a persistent torsional imbalance in the AMS.
  • One terminal enforces higher AMS tension; the other enforces lower tension.
  • No external relaxation path exists yet.

Frame 1 — Circuit closed

  • The conductor connects the two boundary conditions.
  • The AMS immediately attempts to equalize tension along the conductor path.
  • A longitudinal AMS tension gradient establishes itself almost instantaneously along the wire.

Frame 2 — Vorton response

  • Vortons in the conductor experience cyclic micro-shear forces from the AMS gradient.
  • Each vorton undergoes:
    • a small rotational slip (torsional adjustment),
    • a tiny lateral repositioning,
    • then partial elastic recovery.
  • These slips are not ballistic motion; they are ratcheted reconfiguration events.

Frame 3 — Resistance emerges

  • The resistor’s geometry and lattice disorder:
    • limits how easily vortons can reconfigure,
    • forces irregular micro-torsion in the AMS.
  • AMS tension cannot relax smoothly; it fragments into chaotic micro-torsion.
  • This manifests macroscopically as heat.

Frame 4 — Steady state

  • Slip frequency stabilizes.
  • The battery continuously re-imposes the gradient.
  • The resistor continuously dissipates AMS tension as heat.
  • No accumulation occurs; this is a dynamic equilibrium.

2) Battery + Capacitor (DC)

Frame 0 — Capacitor uncharged

  • Plates are neutral; AMS tension is uniform.
  • Dielectric holds vortons in a configuration that resists slip.

Frame 1 — Circuit closed

  • AMS tension propagates to the first plate.
  • Vortons in the plate begin coordinated micro-slip.
  • AMS tension accumulates at the plate surface.

Frame 2 — Spatial tension storage

  • The dielectric prevents direct relaxation.
  • AMS tension compresses spatially between plates.
  • Vortons in the dielectric polarize but do not transport.

Frame 3 — Charging slows

  • As spatial AMS tension builds, it opposes further reconfiguration.
  • Slip frequency decreases progressively.
  • Current decays smoothly toward zero.

Frame 4 — Fully charged

  • AMS tension between plates equals battery-imposed gradient.
  • No further slip occurs.
  • Energy is stored as spatial tension, not motion.

3) Battery + Inductor (DC)

Frame 0 — Inductor at rest

  • AMS torsion loops around the coil are neutral.
  • No persistent circulation exists.

Frame 1 — Circuit closed

  • AMS tension attempts to establish along the wire.
  • The coil geometry forces tension into circular torsion paths.

Frame 2 — Torsion buildup

  • Each micro-slip event reinforces circulating AMS torsion.
  • The growing torsion resists changes in slip rate.

Frame 3 — Opposition to change

  • The inductor resists change in reconfiguration rate, not flow itself.
  • Slip frequency rises slowly rather than instantly.

Frame 4 — Steady state

  • AMS torsion stabilizes.
  • Slip proceeds steadily.
  • The inductor now behaves like ordinary conductor.

4) Battery + Resistor + Capacitor (RC)

Frame 0 — Initial connection

  • AMS tension reaches the resistor first.
  • Slip begins immediately but is constrained.

Frame 1 — Capacitor begins charging

  • Spatial AMS tension accumulates between capacitor plates.
  • Slip frequency is initially high.

Frame 2 — Competing constraints

  • Resistor dissipates AMS tension as heat.
  • Capacitor accumulates AMS tension as spatial compression.
  • Slip rate decreases as spatial tension grows.

Frame 3 — Approach to equilibrium

  • Capacitor tension approaches battery gradient.
  • Slip frequency approaches zero.
  • Resistor dissipation declines accordingly.

Frame 4 — Charged state

  • No further slip.
  • Energy stored spatially in capacitor.
  • No current despite closed circuit.

5) AC Source + Resistor + Inductor (RL, AC)

Frame 0 — AC source begins oscillation

  • AMS tension gradient reverses direction periodically.
  • No steady equilibrium is possible.

Frame 1 — First half-cycle

  • Slip events establish torsion circulation in inductor.
  • Resistor dissipates chaotic micro-torsion as heat.

Frame 2 — Gradient reversal

  • Source reverses AMS tension direction.
  • Existing torsion resists reversal (inductive inertia).

Frame 3 — Phase lag emerges

  • Slip frequency lags tension reversal.
  • Inductor temporarily stores torsional energy.
  • Resistor continues dissipating.

Frame 4 — Steady AC regime

  • Slip oscillates continuously.
  • AMS torsion builds and collapses cyclically.
  • Phase relationships between voltage and current emerge naturally.

Summary Insight

  • Voltage = imposed AMS tension gradient.
  • Current = rate of coordinated vorton reconfiguration events.
  • Resistance = obstruction to smooth AMS reconfiguration.
  • Capacitance = spatial AMS tension storage.
  • Inductance = circulating AMS torsion storage.
  • Power = rate of AMS tension redistribution.

Nothing “flows” as substance.
Everything reconfigures.

​

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